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| N-Channel JFET Monolithic Dual CORPORATION SST5911 / SST5912 FEATURES DESCRIPTION The SST5912 is a High Speed N-Channel Monolithic JFET pair encapsulated in a surface mount plastic SO-8 package. The device is designed for high gain (typically > 6000 mhos), low leakage ( < 1pA typically) and low noise, The SST5912 is an excellent choice for differential wideband amplifiers, VHF/UHF amplifiers and test and measurement. ORDERING INFORMATION Part Package Temperature Range -55oC to +150oC SST5912 Plastic SO-8 Package * High Gain . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . gfs > 6 mS * Low Leakage . . . . . . . . . . . . . . . . . . . . . . IG < 1pA typical * Low Noise Package * Surface Mount * Differential Wideband Amplifier * VHF/UHF Amplifiers * Test and Measurement APPLICATIONS NOTE: For Sorted Chips in Carriers, See 2N5911 Series PIN CONFIGURATION SO-8 TOP VIEW (1) S1 (2) D1 (3) G1 (4) N/C N/C (8) G2 (7) D2 (6) S2 (5) CJ1 PRODUCT MARKING SST5912 SST5912 ABSOLUTE MAXIMUM RATINGS (TA = 25oC unless otherwise noted) Parameter/Test Condition Gate-Drain Voltage Gate-Source Voltage Forward Gate Current Power Dissipation (per side) (total) Power Derating (per side) (total) Operating Junction Temperature Storage Temperature Lead Temperature (1/16" from case for 10 seconds) Symbol VGD VGS IG PD Limit -25 -25 50 300 500 2.4 4 -55 to 150 -65 to 150 300 Unit V V mA mW mW mW/ oC mW/ oC o C o C o C TJ Tstg TL SST5911 / SST5912 CORPORATION ELECTRICAL CHARACTERISTICS (TA = 25oC unless otherwise noted) SYMBOL STATIC V(BR)GSS VGS(OFF) IDSS IGSS IG VGS VGS(F) DYNAMIC gfs gos gfs gos Ciss Crss en NF Common-Source Forward Transconductance Common-Source Output Conductance Common-Source Forward Transconductance Common-Source Output Conductance Common-Source Input Capacitance Common-Source Reverse Transfer Capacitance Equivalent Input Noise Voltage Noise Figure 6 20 6 30 3.5 1 4 0.1 5 5 10 100 10 150 5 1.2 20 1 mS S mS S pF VDG = 10V, ID = 5mA f = 1kHz VDG = 10V, ID = 5mA f = 100MHz VDG = 10V, ID = 5mA f = 1MHz Gate-Source Breakdown Voltage Gate-Source Cut off Voltage Saturation Drain Current Gate Reverse Current Gate Operating Current Gate-Source Voltage Gate-Source Forward Voltage 2 CHARACTERISTCS TYP1 SST5912 MIN -25 -1 7 -5 40 -100 -100 -0.3 -4 MAX UNIT TEST CONDITIONS -35 -3.5 15 -1 -0.2 -1 -0.2 -1.5 0.7 V mA pA nA pA nA V IG = -1A, VDS = 0V VDS = 10V, ID = 1nA VDS = 10V, VGS = 0V VGS = -15V, VDS = 0V TA = 125 oC VDG = 10V, ID = 5mA TA = 125 oC VDG = 10V, ID = 5mA IG = 1mA, VDS = 0V nV/ Hz VDG = 10V, ID = 5mA, f = 10kHz dB VDG = 10V, ID = 5mA, f = 10kHz, RG = 100 ELECTRICAL CHARACTERISTICS (continued) (TA = 25oC unless otherwise noted) SST5911 SYMBOL CHARACTERISTICS MIN MAX MIN MAX | IG1 - IG2 | IDSS1 IDSS2 | VGS1 - VGS2 | | VGS1 - VGS2 | T Differential Gate Current Saturation Drain Current Ratio Differential Gate-Source Voltage 0.95 20 1 10 20 Gate Source Voltage Differential Drift (Measured at end points, TA and TB) 20 Transconductance Ratio 0.95 1 0.95 40 1 0.95 20 1 15 40 V/ oC VDG = 10V, ID = 5mA mV TA = 25oC TB = 125 oC TA = -55oC TB = 25oC f = 1kHz nA VDG = 10V, ID = 5mA TA = 125 oC SST5912 UNITS TEST CONDITIONS VDS = 10V, VGS = 0 (Pulsewidth 300s, duty cycle 3%) gfs1 gfs2 NOTES: 1. For design aid only, not subject to production testing. 2. Pulse test; PW = 300s, duty cycle 3%. |
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